Tantalum-based Diffusion Barriers for Copper Metallization
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منابع مشابه
Amorphous Metaluc Alloys: a New Advance in Thin-film Diffusion Barriers for Copper Metallization
To overcome these problems, very effective diffusion barriers need to be developed. These barriers should have a low diffusivity for copper, a high thermal stability, and should lack a driving force for chemical reactions with Cu, silicon or silicides. Unlike aluminum, copper does not form stable intermetallic compounds with the transition metals of the V and Cr groups, and the mutual solid sol...
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تاریخ انتشار 2001